100T2 BJT

100T2

100T2 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 100T2
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 85 W
  • Maximum Collector-Base Voltage: 120 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 10 V
  • Maximum Collector Current: 5 A
  • Maximum Operating Junction Temperature: 175 °C
  • Forward Current Transfer Ratio (hFE Value): 30
  • Package: TO3
  • Noise Figure: -

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