100T2 BJT
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100T2 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 100T2
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 85 W
- Maximum Collector-Base Voltage: 120 V
- Maximum Collector-Emitter Voltage: 80 V
- Maximum Emitter-Base Voltage: 10 V
- Maximum Collector Current: 5 A
- Maximum Operating Junction Temperature: 175 °C
- Forward Current Transfer Ratio (hFE Value): 30
- Package: TO3
- Noise Figure: -