103NU70 BJT

103NU70
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103NU70 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 103NU70
  • Material of Transistor: Ge
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.05 W
  • Maximum Collector-Base Voltage: 20 V
  • Maximum Emitter-Base Voltage: 2 V
  • Maximum Collector Current: 0.1 A
  • Maximum Operating Junction Temperature: 90 °C
  • Transition Frequency: 0.5 MHz
  • Forward Current Transfer Ratio (hFE Value): 20
  • Package: TO1
  • Noise Figure: -