1074GE BJT
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1074GE BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 1074GE
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 12.5 W
- Maximum Collector-Base Voltage: 1500 V
- Maximum Collector-Emitter Voltage: 700 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 8 A
- Maximum Operating Junction Temperature: 115 °C
- Transition Frequency: 4 MHz
- Forward Current Transfer Ratio (hFE Value): 2
- Collector Capacitance: 125 pF
- Package: TO3
- Noise Figure: -