1074GE BJT

1074GE BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 1074GE
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 12.5 W
  • Maximum Collector-Base Voltage: 1500 V
  • Maximum Collector-Emitter Voltage: 700 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 115 °C
  • Transition Frequency: 4 MHz
  • Forward Current Transfer Ratio (hFE Value): 2
  • Collector Capacitance: 125 pF
  • Package: TO3
  • Noise Figure: -

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