107NU70 BJT

107NU70

107NU70 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 107NU70
  • Material of Transistor: Ge
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.125 W
  • Maximum Collector-Base Voltage: 32 V
  • Maximum Emitter-Base Voltage: 10 V
  • Maximum Collector Current: 0.01 A
  • Maximum Operating Junction Temperature: 90 °C
  • Transition Frequency: 1 MHz
  • Forward Current Transfer Ratio (hFE Value): 65
  • Package: TO1
  • Noise Figure: -