108T2 BJT

108T2 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 108T2
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 175 W
  • Maximum Collector-Base Voltage: 120 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 10 V
  • Maximum Collector Current: 30 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 10 MHz
  • Forward Current Transfer Ratio (hFE Value): 20
  • Package: TO3
  • Noise Figure: -