109T2 BJT
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109T2 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 109T2
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 175 W
- Maximum Collector-Base Voltage: 160 V
- Maximum Collector-Emitter Voltage: 125 V
- Maximum Emitter-Base Voltage: 10 V
- Maximum Collector Current: 30 A
- Maximum Operating Junction Temperature: 200 °C
- Transition Frequency: 10 MHz
- Forward Current Transfer Ratio (hFE Value): 20
- Package: TO3
- Noise Figure: -