111T2 BJT
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111T2 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 111T2
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.8 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Emitter-Base Voltage: 4 V
- Maximum Operating Junction Temperature: 175 °C
- Forward Current Transfer Ratio (hFE Value): 30
- Package: TO39
- Noise Figure: -