111T2 BJT

111T2 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 111T2
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.8 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Emitter-Base Voltage: 4 V
  • Maximum Operating Junction Temperature: 175 °C
  • Forward Current Transfer Ratio (hFE Value): 30
  • Package: TO39
  • Noise Figure: -

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