121-1003 BJT

121-1003 121-1003

121-1003 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 121-1003
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 50 W
  • Maximum Collector-Base Voltage: 1500 V
  • Maximum Collector-Emitter Voltage: 600 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 7 A
  • Maximum Operating Junction Temperature: 175 °C
  • Transition Frequency: 2 MHz
  • Forward Current Transfer Ratio (hFE Value): 10
  • Package: TO3
  • Noise Figure: -