121-1039 BJT
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121-1039 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 121-1039
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 50 W
- Maximum Collector-Base Voltage: 1500 V
- Maximum Collector-Emitter Voltage: 600 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 7 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 1 MHz
- Forward Current Transfer Ratio (hFE Value): 8
- Collector Capacitance: 165 pF
- Package: TO3
- Noise Figure: -