121-1040 BJT

121-1040 121-1040

121-1040 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 121-1040
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.625 W
  • Maximum Collector-Base Voltage: 80 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 4 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 100 MHz
  • Forward Current Transfer Ratio (hFE Value): 50
  • Package: TO92
  • Noise Figure: -