121-1058 BJT

121-1058 121-1058

121-1058 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 121-1058
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 6.5 W
  • Maximum Collector-Base Voltage: 300 V
  • Maximum Collector-Emitter Voltage: 300 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 50 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 3 pF
  • Package: TO202
  • Noise Figure: -