121-1061-01 BJT

121-1061-01 121-1061-01

121-1061-01 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 121-1061-01
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 40 W
  • Maximum Collector-Base Voltage: 100 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 4 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 10 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 40 pF
  • Package: TO220
  • Noise Figure: -