121-755 BJT

121-755 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 121-755
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 2 W
  • Maximum Collector-Base Voltage: 300 V
  • Maximum Collector-Emitter Voltage: 300 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 45 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Package: TO202
  • Noise Figure: -