121-792 BJT

121-792 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 121-792
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 2.5 W
  • Maximum Collector-Base Voltage: 250 V
  • Maximum Collector-Emitter Voltage: 220 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.06 A
  • Maximum Operating Junction Temperature: 180 °C
  • Transition Frequency: 50 MHz
  • Forward Current Transfer Ratio (hFE Value): 20
  • Package: TO39
  • Noise Figure: -