121-792 BJT
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121-792 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 121-792
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 2.5 W
- Maximum Collector-Base Voltage: 250 V
- Maximum Collector-Emitter Voltage: 220 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.06 A
- Maximum Operating Junction Temperature: 180 °C
- Transition Frequency: 50 MHz
- Forward Current Transfer Ratio (hFE Value): 20
- Package: TO39
- Noise Figure: -