1501 BJT


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1501 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 1501
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.6 W
- Maximum Collector-Base Voltage: 30 V
- Maximum Collector-Emitter Voltage: 25 V
- Maximum Emitter-Base Voltage: 4 V
- Maximum Collector Current: 0.05 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 110
- Package: TO92
- Noise Figure: -