153NU70 BJT

153NU70 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 153NU70
  • Material of Transistor: Ge
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.05 W
  • Maximum Collector-Base Voltage: 10 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.005 A
  • Maximum Operating Junction Temperature: 90 °C
  • Transition Frequency: 1 MHz
  • Forward Current Transfer Ratio (hFE Value): 10
  • Package: TO1
  • Noise Figure: -