2N23867 BJT
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2N23867 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2N23867
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 1 W
- Maximum Collector-Emitter Voltage: 40 V
- Maximum Collector Current: 3 A
- Transition Frequency: 60 MHz
- Forward Current Transfer Ratio (hFE Value): 40
- Package: TO-39
- Noise Figure: -