2N23867 BJT

2N23867 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N23867
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1 W
  • Maximum Collector-Emitter Voltage: 40 V
  • Maximum Collector Current: 3 A
  • Transition Frequency: 60 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Package: TO-39
  • Noise Figure: -

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