2N3010 BJT

2N3010

2N3010 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N3010
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.36 W
  • Maximum Collector-Base Voltage: 15 V
  • Maximum Collector-Emitter Voltage: 6 V
  • Maximum Emitter-Base Voltage: 4 V
  • Maximum Collector Current: 0.05 A
  • Maximum Operating Junction Temperature: 175 °C
  • Transition Frequency: 600 MHz
  • Forward Current Transfer Ratio (hFE Value): 25
  • Collector Capacitance: 3 pF
  • Package: TO18
  • Noise Figure: -

Top 2N3010 Equivalent Transistors