2N3055HV BJT

2N3055HV 2N3055HV
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2N3055HV BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N3055HV
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 90 W
  • Maximum Collector-Base Voltage: 100 V
  • Maximum Collector-Emitter Voltage: 100 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 15 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 2.5 MHz
  • Forward Current Transfer Ratio (hFE Value): 5
  • Package: TO-3
  • Noise Figure: -

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