2N40 BJT

2N40 2N40

2N40 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N40
  • Material of Transistor: Ge
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.05 W
  • Maximum Collector-Base Voltage: 30 V
  • Maximum Collector-Emitter Voltage: 30 V
  • Maximum Emitter-Base Voltage: 12 V
  • Maximum Collector Current: 0.008 A
  • Maximum Operating Junction Temperature: 100 °C
  • Forward Current Transfer Ratio (hFE Value): 15
  • Package: TO22
  • Noise Figure: -

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