2N400 BJT
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2N400 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2N400
- Material of Transistor: Ge
- Polarity: PNP
- Maximum Collector Power Dissipation: 25 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 40 V
- Maximum Collector Current: 3 A
- Maximum Operating Junction Temperature: 95 °C
- Transition Frequency: 0.2 MHz
- Forward Current Transfer Ratio (hFE Value): 50
- Package: TO3
- Noise Figure: -