2N4001 BJT

2N4001

2N4001 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N4001
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 1 W
  • Maximum Collector-Base Voltage: 120 V
  • Maximum Collector-Emitter Voltage: 100 V
  • Maximum Emitter-Base Voltage: 8 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 40 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Collector Capacitance: 60 pF
  • Package: TO5
  • Noise Figure: -

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