2N500 BJT

2N500 2N500

2N500 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N500
  • Material of Transistor: Ge
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.05 W
  • Maximum Collector-Emitter Voltage: 15 V
  • Maximum Collector Current: 0.05 A
  • Maximum Operating Junction Temperature: 85 °C
  • Transition Frequency: 80 MHz
  • Forward Current Transfer Ratio (hFE Value): 6
  • Collector Capacitance: 3 pF
  • Package: TO9
  • Noise Figure: -

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