2N5001S BJT

2N5001S 2N5001S

2N5001S BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N5001S
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 30 W
  • Maximum Collector-Base Voltage: 100 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 560 MHz
  • Forward Current Transfer Ratio (hFE Value): 70
  • Package: TO59
  • Noise Figure: -

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