2N5001SMD BJT

2N5001SMD 2N5001SMD

2N5001SMD BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N5001SMD
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 30 W
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Collector Current: 2 A
  • Transition Frequency: 60 MHz
  • Forward Current Transfer Ratio (hFE Value): 70
  • Package: TO-276AB
  • Noise Figure: -

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