2N5002 BJT

2N5002 2N5002

2N5002 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N5002
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 33 W
  • Maximum Collector-Base Voltage: 100 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 5 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 560 MHz
  • Forward Current Transfer Ratio (hFE Value): 30
  • Package: TO59
  • Noise Figure: -

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