2N60 BJT

2N60

2N60 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N60
  • Material of Transistor: Ge
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.18 W
  • Maximum Collector-Base Voltage: 25 V
  • Maximum Emitter-Base Voltage: 10 V
  • Maximum Collector Current: 0.2 A
  • Maximum Operating Junction Temperature: 85 °C
  • Transition Frequency: 0.6 MHz
  • Forward Current Transfer Ratio (hFE Value): 70
  • Collector Capacitance: 80 pF
  • Package: TO5
  • Noise Figure: -

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