2N600 BJT

2N600 2N600

2N600 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N600
  • Material of Transistor: Ge
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.75 W
  • Maximum Collector-Base Voltage: 35 V
  • Maximum Emitter-Base Voltage: 30 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 100 °C
  • Transition Frequency: 5 MHz
  • Forward Current Transfer Ratio (hFE Value): 70
  • Collector Capacitance: 20 pF
  • Package: TO31
  • Noise Figure: -

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