2N6001 BJT

2N6001 2N6001

2N6001 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N6001
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.4 W
  • Maximum Collector-Base Voltage: 35 V
  • Maximum Collector-Emitter Voltage: 25 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 225 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 8 pF
  • Package: TO98-1
  • Noise Figure: -

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