2N6006 BJT

2N6006 2N6006

2N6006 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2N6006
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.4 W
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 40 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 165 MHz
  • Forward Current Transfer Ratio (hFE Value): 250
  • Collector Capacitance: 6 pF
  • Package: X55-1
  • Noise Figure: -

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