2SA0879 BJT


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2SA0879 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SA0879
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 1 W
- Maximum Collector-Base Voltage: 250 V
- Maximum Collector-Emitter Voltage: 200 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.07 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 50 MHz
- Forward Current Transfer Ratio (hFE Value): 60
- Collector Capacitance: 5 pF
- Package: SC-51_TO-92L-A1
- Noise Figure: -