2SA0879 BJT

2SA0879 2SA0879

2SA0879 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SA0879
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1 W
  • Maximum Collector-Base Voltage: 250 V
  • Maximum Collector-Emitter Voltage: 200 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.07 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 50 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 5 pF
  • Package: SC-51_TO-92L-A1
  • Noise Figure: -