2SA1001 BJT

2SA1001 2SA1001

2SA1001 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SA1001
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 80 W
  • Maximum Collector-Base Voltage: 130 V
  • Maximum Collector-Emitter Voltage: 130 V
  • Maximum Emitter-Base Voltage: 4 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 40 MHz
  • Forward Current Transfer Ratio (hFE Value): 50
  • Collector Capacitance: 350 pF
  • Package: TO3
  • Noise Figure: -