2SA1006 BJT

2SA1006 2SA1006

2SA1006 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SA1006
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 25 W
  • Maximum Collector-Base Voltage: 180 V
  • Maximum Collector-Emitter Voltage: 180 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 1.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 80 MHz
  • Forward Current Transfer Ratio (hFE Value): 120
  • Collector Capacitance: 45 pF
  • Package: TO220
  • Noise Figure: -