2SA1785 BJT
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2SA1785 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SA1785
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 1 W
- Maximum Collector-Base Voltage: 400 V
- Maximum Collector-Emitter Voltage: 400 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 1 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 50 MHz
- Forward Current Transfer Ratio (hFE Value): 40
- Collector Capacitance: 12 pF
- Package: NMP
- Noise Figure: -