2SA1899 BJT


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2SA1899 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SA1899
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 1 W
- Maximum Collector-Base Voltage: 120 V
- Maximum Collector-Emitter Voltage: 120 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.8 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 120 MHz
- Forward Current Transfer Ratio (hFE Value): 80
- Collector Capacitance: 40 pF
- Package: 2-7D2A
- Noise Figure: -