2SA1955 BJT


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2SA1955 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SA1955
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 0.1 W
- SMD Transistor Code: GA
- Maximum Collector-Base Voltage: 15 V
- Maximum Collector-Emitter Voltage: 12 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.4 A
- Maximum Operating Junction Temperature: 125 °C
- Transition Frequency: 80 MHz
- Forward Current Transfer Ratio (hFE Value): 300
- Collector Capacitance: 4.2 pF
- Package: 2-2H1A
- Noise Figure: -