2SA1955 BJT

2SA1955 2SA1955

2SA1955 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SA1955
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.1 W
  • SMD Transistor Code: GA
  • Maximum Collector-Base Voltage: 15 V
  • Maximum Collector-Emitter Voltage: 12 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.4 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 80 MHz
  • Forward Current Transfer Ratio (hFE Value): 300
  • Collector Capacitance: 4.2 pF
  • Package: 2-2H1A
  • Noise Figure: -