2SA1969 BJT


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2SA1969 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SA1969
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 1.3 W
- SMD Transistor Code: AQ
- Maximum Collector-Base Voltage: 10 V
- Maximum Collector-Emitter Voltage: 10 V
- Maximum Emitter-Base Voltage: 2 V
- Maximum Collector Current: 0.4 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 1700 MHz
- Forward Current Transfer Ratio (hFE Value): 20
- Collector Capacitance: 4.7 pF
- Package: PCP
- Noise Figure: -