2SA1993 BJT

2SA1993 2SA1993
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2SA1993 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SA1993
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.45 W
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 0.2 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 200 MHz
  • Forward Current Transfer Ratio (hFE Value): 150
  • Collector Capacitance: 4 pF
  • Package: MICRO
  • Noise Figure: -

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