2SA2009 BJT

2SA2009 2SA2009
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2SA2009 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SA2009
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.15 W
  • SMD Transistor Code: AR
  • Maximum Collector-Base Voltage: 120 V
  • Maximum Collector-Emitter Voltage: 120 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.02 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 200 MHz
  • Forward Current Transfer Ratio (hFE Value): 180
  • Package: SC-70
  • Noise Figure: -

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