2SA2014 BJT


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2SA2014 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SA2014
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 3.5 W
- SMD Transistor Code: AU
- Maximum Collector-Base Voltage: 15 V
- Maximum Collector-Emitter Voltage: 15 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 9 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 220 MHz
- Forward Current Transfer Ratio (hFE Value): 200
- Collector Capacitance: 90 pF
- Package: PCP
- Noise Figure: -