2SA2015 BJT

2SA2015 2SA2015
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2SA2015 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SA2015
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 3.5 W
  • SMD Transistor Code: AV
  • Maximum Collector-Base Voltage: 40 V
  • Maximum Collector-Emitter Voltage: 30 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 290 MHz
  • Forward Current Transfer Ratio (hFE Value): 200
  • Collector Capacitance: 52 pF
  • Package: PCP
  • Noise Figure: -

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