2SA2025 BJT

2SA2025 2SA2025
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2SA2025 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SA2025
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.55 W
  • Maximum Collector-Base Voltage: 15 V
  • Maximum Collector-Emitter Voltage: 12 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 280 MHz
  • Forward Current Transfer Ratio (hFE Value): 200
  • Collector Capacitance: 36 pF
  • Package: SPA
  • Noise Figure: -

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