2SB1066M BJT

2SB1066M 2SB1066M
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2SB1066M BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SB1066M
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 70 MHz
  • Forward Current Transfer Ratio (hFE Value): 56
  • Collector Capacitance: 50 pF
  • Package: ATR
  • Noise Figure: -

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