2SB1130AM BJT
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2SB1130AM BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SB1130AM
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 1 W
- Maximum Collector-Base Voltage: 160 V
- Maximum Collector-Emitter Voltage: 160 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 1.5 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 50 MHz
- Forward Current Transfer Ratio (hFE Value): 56
- Collector Capacitance: 30 pF
- Package: ATR
- Noise Figure: -