2SB1321A BJT
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2SB1321A BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SB1321A
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 0.6 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Collector-Emitter Voltage: 50 V
- Maximum Emitter-Base Voltage: 7 V
- Maximum Collector Current: 0.5 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 200 MHz
- Forward Current Transfer Ratio (hFE Value): 85
- Collector Capacitance: 6 pF
- Package: MT1
- Noise Figure: -