2SB1504 BJT

2SB1504 2SB1504

2SB1504 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SB1504
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1.5 W
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 20 MHz
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Package: MT-3-A1
  • Noise Figure: -