2SB1602 BJT


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2SB1602 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SB1602
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 1.3 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Collector-Emitter Voltage: 60 V
- Maximum Emitter-Base Voltage: 7 V
- Maximum Collector Current: 3 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 300
- Collector Capacitance: 60 pF
- Package: 2-8M1A
- Noise Figure: -