2SB1612 BJT

2SB1612 2SB1612
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2SB1612 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SB1612
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1 W
  • SMD Transistor Code: 2F
  • Maximum Collector-Base Voltage: 10 V
  • Maximum Collector-Emitter Voltage: 10 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 60 MHz
  • Forward Current Transfer Ratio (hFE Value): 200
  • Collector Capacitance: 100 pF
  • Package: SC-62
  • Noise Figure: -

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