2SB1623A BJT

2SB1623A 2SB1623A
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2SB1623A BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SB1623A
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 40 W
  • Maximum Collector-Base Voltage: 80 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 4 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 20 MHz
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Package: TO-220D-A1
  • Noise Figure: -

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