2SB1629 BJT

2SB1629 2SB1629
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2SB1629 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SB1629
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 40 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 30 MHz
  • Forward Current Transfer Ratio (hFE Value): 300
  • Package: TO-220E
  • Noise Figure: -

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